The 40N60 IGBT is an Insulated Gate Bipolar Transistor designed for power electronic applications. It combines the advantages of MOSFETs and bipolar transistors, providing high-speed switching capability and robust current handling capacity. This makes it ideal for applications such as motor drives, renewable energy systems, and welding machines, where efficient power control and switching are essential.
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IGBT
40N60
Availability:
250 in stock
The 40N60 IGBT is a type of Insulated Gate Bipolar Transistor utilized in various power electronic applications. It offers high-speed switching capabilities coupled with a high-current handling capacity, making it suitable for applications requiring efficient power control and switching.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 s Short−Circuit Capability
• These are Pb−Free Devices
Applications
• Solar Inverters
• Uninterruptable Power Supply (UPS)
Datasheet
₹110.00 ₹114.00
250 in stock
| Parameter | Value |
|---|---|
| Model | FGH40N60SFD |
| Brand | Onsemi/FSC |
| Collector to Emitter Voltage (VCES) | 600V |
| Gate to Emitter Voltage (VGES) | 20V |
| Transient Gate-to-Emitter Voltage | 30V |
| Collector Current (IC) | 40°C-80°C |
| Pulsed Collector Current (ICM) | 120A |
| Operating Junction Temperature (TJ) | -55°C – 150°C |
| Power Dissipation | 160W – 290W |
| Package | TO-247 |
| Country of Origin | China |
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