-11%

60N60

Availability:

80 in stock


The 60N60 IGBT is a type of Insulated Gate Bipolar Transistor commonly used in various power electronic applications such as motor drives, power supplies, inverters, and welding machines. It combines the advantages of both MOSFETs and bipolar transistors, offering high-speed switching capability and high-current handling capacity. This IGBT is suitable for applications requiring efficient power control and switching.

Features

• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
• High Input Impedance
• Fast Switching: EOFF = 7.5 uJ/A
• Tightened Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant

Applications

  • Solar Inverter
  • UPS
  • Welder
  • Telecom
  • ESS (Energy Storage Systems)
  • PFC (Power Factor Correction)

Datasheet

60N60-igbt-dashee

160.00 180.00

80 in stock

The 60N60 IGBT is a specific model of Insulated Gate Bipolar Transistor (IGBT) designed for use in a variety of power electronic applications. This semiconductor device serves as a crucial component in systems like motor drives, power supplies, inverters, and welding machines.

IGBTs like the 60N60 offer a balance of features from both MOSFETs and bipolar transistors. They provide high-speed switching capabilities similar to MOSFETs while also offering the high-current handling capacity characteristic of bipolar transistors. This makes them versatile and suitable for applications that require efficient power control and switching.

In essence, the 60N60 IGBT plays a vital role in enabling efficient power management and control in diverse electronic systems, contributing to their overall performance and reliability.

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Category:
Attribute Details
Brand SILAN
Part Number 60N60
Mounting Type TO-247
Package Type TO-247
Pin Count 3
Transistor Configuration 60A, 600V FIELD STOP IGBT

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