The 40N60 IGBT is a type of Insulated Gate Bipolar Transistor utilized in various power electronic applications. It offers high-speed switching capabilities coupled with a high-current handling capacity, making it suitable for applications requiring efficient power control and switching.

Features

• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 s Short−Circuit Capability
• These are Pb−Free Devices

Applications

• Solar Inverters
• Uninterruptable Power Supply (UPS)

Datasheet

The 50T65 IGBT is a type of Insulated Gate Bipolar Transistor used in various power electronic applications, including motor drives, renewable energy systems, and welding machines. It combines the high-speed switching capability of a MOSFET with the high-current handling capability of a bipolar transistor, making it suitable for applications requiring efficient power switching and control.

Features

• Max Junction Temperature TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 50 A
• 100% of the Parts Tested for ILM
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant

Applications

• Solar Inverter
• UPS
• Welder
• Telecom
• ESS (Energy Storage Systems)
• PFC (Power Factor Correction)

Datasheet