50T120
The 50T120 IGBT is a type of Insulated Gate Bipolar Transistor commonly used in welding machines for efficient power switching and control. It combines high-speed switching capabilities with the ability to handle high currents, making it suitable for various welding applications.
Features
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• TrenchStop®
and Fieldstop technology for 600 V applications
offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models
Applications
• Inductive Cooking
• Soft Switching Applications
80 in stock
₹310.00 ₹317.00
80 in stock
| Parameter | Value |
|---|---|
| Mounting Type | Through Hole |
| Description | IHW40T120FKSA1 |
| Place of Origin | China |
| Package / Case | PG-TO247-3-1 |
| Type | Transistor |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Series | IHW40T120FKSA1 Transistor |
| D/C | New |
| Application | IGBT Transistor |
| Brand | 40T120 |
| Current – Collector (Ic) (Max) | 120A |
| Voltage – Collector Emitter Breakdown (Max) | 600V |
| Current – Collector Cutoff (Max) | 120A |
| Power – Max | 303W |
| Frequency – Transition | 920uJ |
| Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 40A |
| Input | Standard |
| Switching Energy | 920uJ |
| Gate Charge | 215 nC |
| Reverse Recovery Time (trr) | 143 ns |
| Test Condition | 400V, 120A, 5.6Ohm, 15V |
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Features
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• TrenchStop®
and Fieldstop technology for 600 V applications
offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
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• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• TrenchStop®
and Fieldstop technology for 600 V applications
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– very tight parameter distribution
– high ruggedness, temperature stable behavior
– low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
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