60T65
The 60T65 IGBT is a type of Insulated Gate Bipolar Transistor commonly used in welding machines for efficient power switching and control. It combines high-speed switching capabilities with the ability to handle high currents, making it suitable for various welding applications.
Features
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• TrenchStop®
and Fieldstop technology for 600 V applications
offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models
Applications
• Inductive Cooking
• Soft Switching Applications
80 in stock
₹200.00 ₹204.00
80 in stock
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Features
• Max Junction Temperature TJ = 175°C
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• 100% of the Parts Tested for ILM
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The 40T65 IGBT is an Insulated Gate Bipolar Transistor (IGBT) ideal for power electronics. It’s widely used in motor drives, renewable energy, and welding machines due to its high-speed switching and high-current capacity, making it perfect for efficient power control.
Features
• Maximum Junction Temperature: TJ =175°C
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The 40N120 IGBT is a type of Insulated Gate Bipolar Transistor commonly used in power electronic applications such as motor drives, renewable energy systems, and welding machines. It offers high efficiency and reliability in power switching operations. This IGBT model can handle high currents and voltages, making it suitable for various industrial and commercial applications where efficient power control is essential.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
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Features
• Maximum Junction Temperature: TJ = 175°C
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Features
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• TrenchStop®
and Fieldstop technology for 600 V applications
offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
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Features
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• TrenchStop®
and Fieldstop technology for 600 V applications
offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice ModelsApplications
• Inductive Cooking
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The 40T120 IGBT is a type of Insulated Gate Bipolar Transistor commonly used in welding machines for efficient power switching and control. It combines high-speed switching capabilities with the ability to handle high currents, making it suitable for various welding applications.
Features
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• TrenchStop®
and Fieldstop technology for 600 V applications
offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice ModelsApplications
• Inductive Cooking
• Soft Switching ApplicationsSKU: n/a
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