The 2SK3878 is part of a new generation of high-voltage MOSFETs designed to optimize performance in power conversion applications. It features an advanced charge balance mechanism, which significantly reduces on-resistance and gate charge, leading to improved efficiency and switching characteristics. This technology minimizes conduction loss and enhances switching performance, enabling the MOSFET to withstand high dv/dt rates and increased avalanche energy. The 2SK3878 is well-suited for a wide range of AC/DC power conversion applications, particularly in switching mode operations, where it contributes to system miniaturization and higher overall efficiency.
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MOSFETs
K3878
Availability:
148 in stock
2SK3878 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features
• Low drain−source ON resistance
• High forward transfer admittance
• Low leakage current
• Enhancement mode
Applications
- AC/DC power conversion
- Switching mode operations
- System miniaturization
- Improved efficiency in power conversion circuits
Datasheet
₹85.00 ₹95.00
148 in stock
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 900V |
| Continuous Drain Current (Id) | 9A |
| Drain-Source Resistance (Rds On) | 1Ohms |
| Gate-Source Voltage (Vgs) | 30V |
| Gate Charge (Qg) | 60 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 150W |
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